Insulated gate bipolar transistor | Биполярный транзистор с изолированным затвором | MG50J2YS50 TOSHIBA

TOSHIBA JAPAN

GTR Module
Silicon N Channel IGBT
High Power Switching Applications
Motor Control Applications
Features
• High input impedance
• High speed: tf = 0.30µs (Max.) (IC = 50A)
trr = 0.15µs (Max.) (IF = 50A)
• Enhancement mode
• The electrodes are isolated from case
• Includes a complete half bridge card in one package

Артикул: MG50J2YS50
ID товара: 42812

Контакты для связи:

E-mail: info@qareket-engineering.com
Телефон: +7 777 182 86 89

Документация:

MG50JSYS50